Radio module based TI CC1312R transceiver, high power PA and LNA.
N533DS CC1312R transceiver high power module designed for 868M and 915Mhz band. Up to 33dbm output power, down to -112dbm sensitivity.
N533DS integrated TI CC1312R transceiver, high power PA and LNA chip, suitable for 868MHz and 915M band. Maximum output power is 33dBm. CC1312R module has the characteristics of low cost, low power consumption and small size. The module is designed with 4-layer board, with excellent impedance matching and anti-interference. The module is mainly for IoT, intelligent home, wireless meter reading, scientific research and medical treatment, and medium and long-distance wireless communication equipment. N533DS leads all pins out for secondary development.
N533DShigh power module (CC1312R ) is suitable for free frequency band in China.
RF Interface
Parameter
Introduce
Frequency
868MHz, 915MHz
Support ISM
Output Power
+33dBm
The maximum power 2000mW
Sensitivity
-112dBm
50kbps
Symbol Rate
0.3-4000kbps
Software programming control
Deviation
+/-10kHz
Antenna interface
Distance
14000m
In clear and open environment, the antenna gain
is 3 dBi, the height above the ground is 2.5 meters,
and the air speed is 1.2 kbps.
Hardware parameters
Value
Remarks
Size
36 x 22 x 3mm
-
Antenna Interface
IPEX, stamp hole
-
Communication Interface
UART, SPI
Software programming
Package
SMD
-
Electrical Parameters
Minimum
Typical
Maximum
Remarks
Volt
1.8V
3.3V
3.9V
PA Volt
3V
5V
6V
Emission Current
1200mA
Instantaneous power consumption
Receiving Current
17mA
-
Sleep current
1uA
Software programming control
Working Temperature
-30℃
75℃
-
Datasheet download
Ordering information
N533DS-868M CC1312R+PA 33dbm, 860Mhz-880Mhz
N533DS-915MCC1312R+PA 33dbm, 910Mhz-930Mhz
Other modules
N531AS-433MCC1312R 14dbm, 410Mhz-510Mhz
N531AS-868MCC1312R 14dbm, 860Mhz-960Mhz
N533FS-433MCC1312R+PA 24dbm, 410Mhz-510Mhz
N533FS-868MCC1312R+PA 24dbm, 860Mhz-960Mhz
N621PA-868MCC1312R+CC1190 27dbm, 860Mhz-880Mhz
N621PA-915MCC1312R+CC1190 27dbm, 910Mhz-930Mhz
N533ES-433MCC1312R+PA 30dbm, 410Mhz-440Mhz
N533ES-490MCC1312R+PA 30dbm, 470Mhz-510Mhz
N533ES-868MCC1312R+PA 30dbm, 860Mhz-880Mhz
N533ES-915MCC1312R+PA 30dbm, 910Mhz-930Mhz
Other Dongle
N535AP-433M CC1312R 14dbm, 410Mhz-510Mhz
N535AP-868M CC1312R 14dbm, 860Mhz-960Mhz
Test method of N533DS high power module
Take the supporting base plate of Heyan technology as an example:
The bottom board of N533DS is T532AP, which integrates USB to serial chip, led, button, burning port and module card port. As shown in the figure:
N533DS secondary development method:
The CC1312R high power module is stuck on the backplane as shown in the figure, and the IPEX is connected with the antenna. The burning port is connected with xds110 according to the silk screen printing, and then online simulation can be carried out to test the performance of the module.
Module Programming
The schematic diagram of the module base plate can be obtained from our official website.
Please contact us for specific programming information or download it from TI official website www.ti.com.
